WebWe describe a method for optical proximity correction (OPC) based on the principle of aerial image matching. Three basic, sub-resolution elements are used: scattering bars, anti-scattering bars, and serifs. We examine the effects of adjusting the sizes and placements of all three elements, and report the improvements achieved, in CD uniformity, printing … WebOptical proximity correction ( OPC) is a photolithography enhancement technique commonly used to compensate for image errors due to diffraction or process effects. The …
Optical proximity correction: Mask pattern-generation challenges
WebRenyang Meng (孟任阳) PhD Alumni Since: 2024 Current Location: Shanghai Huali Intergrated Circuit Corporation Position: Optical Proximity Correction Engineer WebAug 23, 2010 · Computational Lithography is the first book to address the computational optimization of RETs in optical lithography, providing an in-depth discussion of optimal optical proximity correction (OPC), phase shifting mask (PSM), and off-axis illumination (OAI) RET tools that use model-based mathematical optimization approaches. try time harpenden
Optical proximity correction method and mask manufacturing …
WebJul 7, 1997 · In this paper, a new automatic model-based Optical Proximity Correction (OPC) approach is reported. It combines a fast aerial image solver and a physically based empirical resist model. The fast aerial image calculation is achieved by using the algorithm of the coherent decomposition of the partially coherent optical systems. WebA technology of optical proximity correction and lithography mask, which is applied in optics, originals for photomechanical processing, photoplate making process of patterned surface, etc., can solve the problem of poor resolution of corrected graphics, achieve improved resolution, Avoid the effect of too small width and improve exposure conditions WebJul 5, 2000 · The recent development of lithographic resolution enhancement techniques of optical proximity correction (OPC) and phase shift masks (PSM) enable sprinting critical dimension (CD) features that are significantly smaller than the exposure wavelength. In this paper, we present a variable threshold OPC model that describes how a pattern … phillips beeskow